PART |
Description |
Maker |
BLF6G10-45 |
Power LDMOS transistor BLF6G10-45<SOT608A (CDFM2)|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;BLF6G10-45<SOT608A (CDFM2)|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-200 |
Power LDMOS transistor
|
Philips Semiconductors
|
LB501A |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
LP701-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G20-230PRN10 |
Power LDMOS transistor
|
NXP Semiconductors
|